document number: 83615 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.9, 21-dec-10 1 optocoupler, phototransistor output, with base connection in soic-8 il211at, il212at, il213at vishay semiconductors description the il211at, il212at, il213at are optically coupled pairs with a gallium arsenide infrared led and silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the il211at, il212at, il213at comes in a standard soic-8 small outline package for surface mounting which makes it ideally suited for hi gh density applications with limited space. in addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. a choice of 20 %, 50 %, and 100 % minimum ctr at i f = 10 ma makes these optocouplers suitable for a variety of different applications. features ? isolation test voltage, 4000 v rms ? industry standard soic-8 surface mountable package ? compatible with dual wave, vapor phase and ir reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-2 (vde 0884) (1) ? din en 60747-5-5 (pending) (1) note (1) available upon request, as option 1 i179002-1 1 2 3 4 a k nc nc 8 7 6 5 nc b c e v de i179025 ordering information il21#at part number agency certified/package ctr (%) 10 ma ul, cul > 20 > 50 > 100 sioc-8 il211at il212at il213at absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input peak reverse voltage v r 6v forward continuous current i f 60 ma power dissi pation p diss 90 mw derate linear ly from 25 c 1.2 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 7v collector base br eakdown voltage v cbo 70 v i cmax dc i cmax dc 50 ma i cmax t < 1 ms i cmax 100 ma power dissi pation p diss 150 mw derate linear ly from 25 c 2mw/c s ioc-8 6.1 mm
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83615 2 rev. 1.9, 21-dec-10 il211at, il212at, il213at vishay semiconductors optocoupler, photot ransistor output, with base connection in soic-8 package note ? stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for e xtended periods of the time ca n adversely affect reliability. note ? minimum and maximum values were tested requierements. typical va lues are characteristics of the device and are the result of e ngineering evaluations. typical values are for information only and are not part of the testing requirements. coupler isolation test voltage v iso 4000 v rms total package dissipation led and detector p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering time at 260 c 10 s electrical characteristcs (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.3 1.5 v reverse current v r = 6 v i r 0.1 100 a capacitance v r = 0 v c o 13 pf output collector emitter breakdown voltage i c = 10 a bv ceo 30 v emitter collector breakdown voltage i e = 10 a bv eco 7v collector dark current v ce = 10 v i ceo 550na collector emitte r capacitance v ce = 0 v c ce 10 pf coupler saturation voltage, collector emitter i f = 10 ma v cesat 0.4 v isolation test voltage 1 s v iso 4000 v rms capacitance (input to output) c io 0.5 50 pf resistance (input to output) r io 100 g collector emitter breakdown voltage i c = 10 a bv ceo 30 v current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 10 ma, v ce = 5 v il211at ctr 20 50 % il212at ctr 50 80 % il213at ctr 100 130 % switching characteristics parameter test condition part symbol min. typ. max. unit switching time i c = 2 ma, r l = 100 , v cc = 10 v t on , t off 3s absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit
document number: 83615 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.9, 21-dec-10 3 il211at, il212at, il213at optocoupler, phototransistor output, with base connection in soic-8 package vishay semiconductors note ? as per iec 60747-5-2, 7.4.3.8.1, this opto coupler is suitable for saf e electrical insulation only within the safety rating s. compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward voltage vs. forward current fig. 2 - collector current vs . collector emitter voltage (ns) fig. 3 - leakage current vs. ambient temperature fig. 4 - collector current vs. collector emitter voltage (sat) safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 55/100/21 comparative tracking index cti 175 399 v iotm 6000 v v iorm 560 v p so 350 mw i si 150 ma t si 165 c creepage distance 4 mm clearance distance 4 mm insulation thickness 0.2 mm v f - forward voltage (v) i f - forward current (ma) 22462 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 t amb = 0 c t amb = 25 c t amb = 50 c t amb = 75 c t amb = 100 c t amb = - 40 c t amb = - 55 c 22463 i c - collector current (ma) v ce - collector emitter voltage (n s ) (v) 012345678 0 5 10 15 20 25 30 35 40 45 50 i f = 30 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma 22466 i ce0 - leakage current (na) t amb - ambient temperature (c) 0.001 0.01 0.1 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 80 100 i f = 0 ma v ce = 40 v v ce = 12 v v ce = 24 v 22464 i c - collector current (ma) v ce - collector emitter voltage ( s at) (v) 0 0.1 0.2 0.3 0.4 0 5 10 15 20 25 30 i f = 25 ma i f = 10 ma i f = 5 ma i f = 2 ma i f = 1 ma
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83615 4 rev. 1.9, 21-dec-10 il211at, il212at, il213at vishay semiconductors optocoupler, photot ransistor output, with base connection in soic-8 package fig. 5 - normalized ctr (ns) vs. ambient temperature fig. 6 - normalized ctr (sat) vs. ambient temperature fig. 7 - normalized ctr (ns) vs. forward current fig. 8 - normalized ctr (sat) vs. forward current fig. 9 - normalized phot ocurrent vs. led current fig. 10 - normalized saturated h fe vs. base current 22490 n ctr - normalized ctr (n s ) t amb - ambient temperature (c) 0 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 v ce = 5 v i f = 10 ma i f = 5 ma i f = 1 ma 22489 n ctr - normalized ctr ( s at) t amb - ambient temperature (c) - 60 - 40 - 20 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce = 0.4 v i f = 10 ma i f = 5 ma i f = 1 ma 22485 n ctr - normalized ctr (n s ) i f - forward current (ma) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 t amb = - 40 c t amb = 0 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 5 v t amb = 25 c t amb = - 55 c 22486 n ctr - normalized ctr ( s at) i f - forward current (ma) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t amb = - 40 c t amb = 0 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 0.4 v t amb = 25 c t amb = - 55 c 22487 ni bp - normalized (i bp ) i f - led current (ma) 0.01 0.1 1 10 0.1 1 10 100 t amb = - 40 c t amb = 0 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 5 v t amb = 25 c t amb = - 55 c 22488 nh fe ( s at) - normalized s aturated h fe i b - ba s e current (a) 0 0.4 0.8 1.2 1.6 2.0 1 10 100 v ce = 0.4 v t amb = 100 c t amb = 75 c t amb = 50 c t amb = - 55 c t amb = - 40 c t amb = 0 c t amb = 25 c
document number: 83615 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.9, 21-dec-10 5 il211at, il212at, il213at optocoupler, phototransistor output, with base connection in soic-8 package vishay semiconductors fig. 11 - f ctr vs. phase angle fig. 12 - f ctr vs. i c fig. 13 - switching time vs. load resistance fig. 14 - switching time vs. base emitter resistance 22470 pha s e (deg) f (khz) - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 1 10 100 1000 v ce = 5 v 22471 f ctr (khz) i c - collector current (ma) 0.1 1 10 100 1 10 100 1000 v cc = 5 v 22491 t on , t off - s witching time ( s ) r l - load re s i s tance (k ) 0.1 1 10 100 1000 0.1 1 10 100 t on t off v ce = 5 v, i f = 10 ma pul s e width = 100 m s f = 1 khz 22492 t on , t off - s witching time ( s ) r be - ba s e emitter re s i s tance (k ) 1 10 100 10 100 1000 10 000 t on t off v ce = 5 v, i f = 10 ma pul s e width = 100 s f = 1 khz, r l = 2.2 k
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83615 6 rev. 1.9, 21-dec-10 il211at, il212at, il213at vishay semiconductors optocoupler, photot ransistor output, with base connection in soic-8 package package dimensions in millimeters package marking (example) i178003 40 7 pin one id 5 max. iso method a 0.91 0.36 4.32 1.14 6.6 r 0.13 1.27 6.10 1.27 typ. 0.41 0.1 0.2 lead coplanarity 0.04 max. 0.20 3.05 0.13 c l r 0.25 max. 0.53 3.91 0.13 0.38 0.05 4.88 0.13 0.51 0.10 2 places 1.49 0.13 3.18 0.13 21764-102 213a v yww y 68
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